Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.
Journal: Advanced Materials (Deerfield Beach, Fla.)
Published:
Abstract
Semiconducting MoS₂(₁-x) Se₂x mono-layers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >10(5).
Authors
Qingliang Feng, Yiming Zhu, Jinhua Hong, Mei Zhang, Wenjie Duan, Nannan Mao, Juanxia Wu, Hua Xu, Fengliang Dong, Fang Lin, Chuanhong Jin, Chunming Wang, Jin Zhang, Liming Xie