Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s.
Journal: Optics Express
Published:
Abstract
Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.
Authors
Dietmar Korn, Robert Palmer, Hui Yu, Philipp Schindler, Luca Alloatti, Moritz Baier, René Schmogrow, Wim Bogaerts, Shankar Selvaraja, Guy Lepage, Marianna Pantouvaki, Johan M Wouters, Peter Verheyen, Joris Van Campenhout, Baoquan Chen, Roel Baets, Philippe Absil, Raluca Dinu, Christian Koos, Wolfgang Freude, Juerg Leuthold