Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO₂/ITO/Cu stack for CMOS backend integration.
Journal: Optics Express
Published:
Abstract
An ultra-compact electro-absorption (EA) modulator operating around 1.55-μm telecom wavelengths is proposed and theoretically investigated. The modulator is comprised of a stack of TiN/HfO2
Authors
Shiyang Zhu, G Lo, D Kwong