Intrinsic ion migration-induced susceptible two-dimensional phase-transition memristor with ultralow power consumption.

Two-dimensional (2D) phase-transition memristors have demonstrated transformative potential for neuromorphic computing, yet challenges like high power consumption, limited endurance, and crystal damage from external ion intercalation persist. Here, we introduce a novel 2D phase-transition memristor leveraging a paradigm-shifting mechanism by exploiting the ultrafast intrinsic Cu+ ion migration within Cu2S. This approach eliminates the need for external ion insertion, significantly reducing crystal damage and enabling exceptional cycling stability with over 400 DC cycles and 500 pulse cycles. The susceptible monoclinic-tetragonal phase-transition induced by intrinsic Cu+ migration achieves an unprecedented SET power consumption of 1 μW at 100 mV, significantly lower in currently reported phase-transition memristors. To further demonstrate the potential of intrinsic ion migration-induced (IIM) memristor, we simulated an IIM memristor crossbar array for image preprocessing in gesture recognition with a high SSIM value of 0.94, showcasing its potential for scalable neuromorphic hardware. This work establishes a new paradigm in low-power, high-performance phase-transition memristors, advancing their practical application in next-generation computing.